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www..com SUP/SUB75N05-07 New Product Vishay Siliconix N-Channel 55-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 55 rDS(on) (W) 0.007 @ VGS = 10 V 0.009 @ VGS = 4.5 V ID (A) "75 a TO-220AB D TO-263 G DRAIN connected to TAB G GDS Top View SUP75N05-07 DS S N-Channel MOSFET Top View SUB75N05-07 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) 175 C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipation L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d TC = 25_C TC = 125_C www..com Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 55 "20 "75a "60 "240 "60 180 158c 3.7 -55 to 175 Unit V A mJ W _C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)d Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Document Number: 70871 S-60952--Rev. A, 19-Apr-99 www.vishay.com S FaxBack 408-970-5600 RthJA RthJC Symbol Limit 40 62.5 0.95 Unit _C/W 2-1 www. .com www..com SUP/SUB75N05-07 Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 44 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS VDS = 44 V, VGS = 0 V, TJ = 125_C VDS = 44 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A DiS OS Ri Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 20 A VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 30 A 40 120 0.0056 0.0072 0.007 0.009 0.011 0.015 S W 55 V 1 3 "100 1 50 250 A mA A nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Fall Timec Timec Ciss Coss Crss Qg VGS = 0 V, VDS = 25 V, f = 1 MHz 6830 720 350 135 25 34 13 VDD = 30 V, RL = 0 47 W V, 0.47 ID ^ 75 A, VGEN = 10 V RG = 2 5 W A V, 2.5 11 90 25 20 20 ns 160 40 170 nC C pF F www..com Qgs VDS = 30 V, VGS = 10 V ID = 75 A V V, Qgd td(on) tr td(off) tf Source-drain Diode Ratings and Characteristics (Tc = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr IF = 75 A di/dt = 100 A/ms A, IF = 75 A, VGS = 0 V 1.0 45 2 0.09 75 A 240 1.3 80 5 0.4 V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70871 S-60952--Rev. A, 19-Apr-99 www. .com www..com SUP/SUB75N05-07 New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 VGS = 5 thru 10 V 200 I D - Drain Current (A) I D - Drain Current (A) 160 200 Vishay Siliconix Transfer Characteristics 150 120 100 4V 80 TC = 125_C 40 25_C -55_C 0 50 2, 3 V 0 0 2 4 6 8 10 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 210 180 g fs - Transconductance (S) 150 120 90 60 30 0 0 20 40 60 80 100 0 0 TC = -55_C r DS(on) - On-Resistance ( W ) 25_C 0.008 0.010 On-Resistance vs. Drain Current VGS = 4.5 V www..com 125_C VGS = 10 V 0.006 0.004 0.002 20 40 60 80 100 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Capacitance 10000 10 Gate Charge 8000 C - Capacitance (pF) Ciss V GS - Gate-to-Source Voltage (V) 8 VGS = 30 V ID = 75 A 6000 6 4000 4 2000 Crss Coss 2 0 0 10 20 30 40 50 0 0 20 40 60 80 100 120 140 VDS - Drain-to-Source Voltage (V) Document Number: 70871 S-60952--Rev. A, 19-Apr-99 Qg - Total Gate Charge (nC) www.vishay.com S FaxBack 408-970-5600 2-3 www. .com www..com SUP/SUB75N05-07 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 75 A r DS(on) - On-Resistance (W) (Normalized) 2.0 I S - Source Current (A) 100 Source-Drain Diode Forward Voltage TJ = 150_C 1.5 TJ = 25_C 10 1.0 0.5 0 -50 1 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Avalanche Current vs. Time 300 80 Drain-Source Breakdown vs. Junction Temperature 100 www..com 70 IAV (A) @ TJ = 25_C V (BR)DSS (V) 60 IAV (A) @ TJ = 150_C 50 I Dav (a) 10 1 0.0001 0.001 0.01 tin (Sec) 0.1 1 40 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70871 S-60952--Rev. A, 19-Apr-99 www. .com www..com SUP/SUB75N05-07 New Product THERMAL RATINGS Vishay Siliconix Maximum Drain Current vs. Case Temperature 80 300 Safe Operating Area 10 ms Limited by rDS(on) I D - Drain Current (A) 60 I D - Drain Current (A) 100 100 ms 40 1 ms 10 TC = 25_C Single Pulse 10 ms 100 ms dc 20 0 0 25 50 75 100 125 150 175 1 0.1 1 10 100 TC - Case Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 www..com 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-5 10-4 10-3 10-2 10-1 1 3 Square Wave Pulse Duration (sec) Document Number: 70871 S-60952--Rev. A, 19-Apr-99 www.vishay.com S FaxBack 408-970-5600 2-5 www. .com www..com Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. www..com Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 www. .com |
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